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Home > english-chinese > "current amplification" in Chinese

Chinese translation for "current amplification"

电僚大
电寥
电流放大;电流放大率
电流放大倍数


Related Translations:
biological amplification:  生物放大(效应)生物富集
overall amplification:  总放大率总放大系数
amplification factor:  放大倍率放大倍数放大率放大因数, 放大系数放大因素载重放大因子增幅率
dna amplification:  dna 扩增dna扩增
video amplification:  视频放大
multiple amplification:  多级放大
photon amplification:  光子放大光子僚大
resonance amplification:  共振放大率
unit amplification:  单级放大
Example Sentences:
1.Current amplification factor
电流放大因数
2.In this article we propose a new kind of spin transistor with current amplification , and analyze its main parameters in detail
摘要该文提出了一种电流放大型自旋晶体管设计思想,并对其电流放大系数作了一定的分析讨论。
3.It is found that the current amplification coefficient strongly depends on the spin polarization of the electrons injected from the emitter to the base , the spin relaxation time and the width of the base
自旋晶体管中的电流放大系数主要取决于注入基区的自旋极化电子的极化程度,基区中自旋的驰豫时间及基区的宽度。
4.At the initial stage of planar technique , b was employed as ideal diffusion impurity in base - region of npn si planar devices because of the match of its solid - solubility and diffusion coefficient in si with those of p in emission - region , and the good shield effect of sio2 film to b . but because of the relatively large solubility ( 5 1020 / cm3 at 1000 ) and the small diffusion coefficient , the linear slowly - changed distribution of acceptor b in pn junction can not be formed , which could not cater to the requirement of high - reversal - voltage devics . thereafter b - a1 paste - layer diffusion technology and close - tube ga - diffusion technology had been developed , while the former can lead to relatively large the base - region deviation and abruptly varied region in si , which caused severe decentralization of current amplification parameter , bad thermal stability and high tr ; the latter needed the relatively difficult pack technique , with poor repeatability , high rejection ratio , and poor diffusion quality and productio n efficiency
在平面工艺初期,由于b在硅中的固溶度、扩散系数与n型发射区的磷相匹配, sio _ 2对其又有良好的掩蔽作用,早被选为npn硅平面器件的理想基区扩散源,但b在硅中的固溶度大( 1000时达到5 10 ~ ( 20 ) ,扩散系数小, b在硅中的杂质分布不易形成pn结中杂质的线性缓变分布,导致器件不能满足高反压的要求,随之又出现了硼铝涂层扩散工艺和闭管扩镓工艺,前者会引起较大的基区偏差,杂质在硅内存在突变区域,导致放大系数分散严重,下降时间t _ f值较高,热稳定性差;后者需要难度较大的真空封管技术,工艺重复性差,报废率高,在扩散质量、生产效率诸方面均不能令人满意。
Similar Words:
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